TY  - JOUR
AU  - Svechnikov, S. I.
AU  - Okunev, O. V.
AU  - Yagoubov, P. A.
AU  - Gol'tsman, G. N.
AU  - Voronov, B. M.
AU  - Cherednichenko, S. I.
AU  - Gershenzon, E. M.
AU  - Gerecht, E.
AU  - Musante, C. F.
AU  - Wang, Z.
AU  - Yngvesson, K. S.
PY  - 1997
DA  - 1997//
TI  - 2.5 THz NbN hot electron mixer with integrated tapered slot antenna
T2  - IEEE Trans. Appl. Supercond.
JO  - IEEE Trans. Appl. Supercond.
SP  - 3548
EP  - 3551
VL  - 7
IS  - 2
KW  - NbN HEB mixers
AB  - A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO[sub:2]membrane. A 0.5 micrometer thick SiO[sub:2]layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO[sub:2]layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO[sub:3]and H[sub:2]O[sub:2].
SN  - 1051-8223
UR  - http://ieeexplore.ieee.org/document/622163/
UR  - https://doi.org/10.1109/77.622163
DO  - 10.1109/77.622163
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1595), last updated on Tue, 25 May 2021 21:32:25 -0500
ID  - Svechnikov_etal1997
ER  -