@InProceedings{Ekstroem_etal1996,
author="Ekstr{\"o}m, H.
and Kroug, M.
and Belitsky, V.
and Kollberg, E.
and Olsson, H.
and Goltsman, G.
and Gershenzon, E.
and Yagoubov, P.
and Voronov, B.
and Yngvesson, S.",
editor="Rolfe, E. J.
and Pilbratt, G.",
title="Hot electron mixers for THz applications",
booktitle="Proc. 30th ESLAB",
year="1996",
pages="207--210",
optkeywords="NbN HEB mixers",
abstract="We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of---16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less {\textquoteleft}than 700 K.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1606), last updated on Wed, 26 May 2021 00:37:53 -0500",
opturl="https://ui.adsabs.harvard.edu/abs/1996ESASP.388..207E"
}