%0 Conference Proceedings
%T Hot electron mixers for THz applications
%A Ekström, H.
%A Kroug, M.
%A Belitsky, V.
%A Kollberg, E.
%A Olsson, H.
%A Goltsman, G.
%A Gershenzon, E.
%A Yagoubov, P.
%A Voronov, B.
%A Yngvesson, S.
%Y Rolfe, E. J.
%Y Pilbratt, G.
%S Proc. 30th ESLAB
%D 1996
%F Ekstroem_etal1996
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1606), last updated on Wed, 26 May 2021 00:37:53 -0500
%X We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
%K NbN HEB mixers
%U https://ui.adsabs.harvard.edu/abs/1996ESASP.388..207E
%P 207-210