PT Unknown
AU Ekström, H
   Kroug, M
   Belitsky, V
   Kollberg, E
   Olsson, H
   Goltsman, G
   Gershenzon, E
   Yagoubov, P
   Voronov, B
   Yngvesson, S
TI Hot electron mixers for THz applications
SE Proc. 30th ESLAB
PY 1996
BP 207
EP 210
DE NbN HEB mixers
AB We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
ER