%0 Journal Article
%T Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K
%A Verevkin, A. A.
%A Ptitsina, N. G.
%A Smirnov, K. V.
%A Gol’tsman, G. N.
%A Gershenzon, E. M.
%A Ingvesson, K. S.
%J JETP Lett.
%D 1996
%V 64
%N 5
%@ 0021-3640
%F Verevkin_etal1996
%O http://jetpletters.ru/ps/981/article_14955.shtml ("Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 - 50 К")
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1608), last updated on Tue, 06 Jul 2021 17:31:07 -0500
%X The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
%K 2DEG
%K AlGaAs/GaAs heterostructures
%R 10.1134/1.567211
%U http://link.springer.com/10.1134/1.567211
%U https://doi.org/10.1134/1.567211
%P 404-409