%0 Journal Article
%T Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions
%A Verevkin, A. A.
%A Ptitsina, N. G.
%A Chulcova, G. M.
%A Gol'tsman, G. N.
%A Gershenzon, E. M.
%A Yngvesson, K. S.
%J Surface Science
%D 1996
%V 361-362
%@ 0039-6028
%F Verevkin_etal1996
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1609), last updated on Wed, 26 May 2021 11:17:39 -0500
%X For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
%K 2DEG
%K AlGaAs/GaAs heterostructures
%R 10.1016/0039-6028(96)00471-2
%U https://linkinghub.elsevier.com/retrieve/pii/0039602896004712
%U https://doi.org/10.1016/0039-6028(96)00471-2
%P 569-573