PT Journal
AU Verevkin, AA
   Ptitsina, NG
   Chulcova, GM
   Gol'tsman, GN
   Gershenzon, EM
   Yngvesson, KS
TI Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions
SO Surface Science
JI Surface Science
PY 1996
BP 569
EP 573
VL 361-362
DI 10.1016/0039-6028(96)00471-2
DE 2DEG; AlGaAs/GaAs heterostructures
AB For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
ER