TY  - JOUR
AU  - Verevkin, A. A.
AU  - Ptitsina, N. G.
AU  - Chulcova, G. M.
AU  - Gol'tsman, G. N.
AU  - Gershenzon, E. M.
AU  - Yngvesson, K. S.
PY  - 1996
DA  - 1996//
TI  - Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions
T2  - Surface Science
JO  - Surface Science
SP  - 569
EP  - 573
VL  - 361-362
KW  - 2DEG
KW  - AlGaAs/GaAs heterostructures
AB  - For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
SN  - 0039-6028
UR  - https://linkinghub.elsevier.com/retrieve/pii/0039602896004712
UR  - https://doi.org/10.1016/0039-6028(96)00471-2
DO  - 10.1016/0039-6028(96)00471-2
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1609), last updated on Wed, 26 May 2021 11:17:39 -0500
ID  - Verevkin_etal1996
ER  -