@Article{Verevkin_etal1996,
author="Verevkin, A. A.
and Ptitsina, N. G.
and Chulcova, G. M.
and Gol{\textquoteright}Tsman, G. N.
and Gershenzon, E. M.
and Yngvesson, K. S.",
title="Determination of the limiting mobility of a two-dimensional electron gas in Al$_{x}$Ga$_{1-x}$As/GaAs heterostructures and direct measurement of the energy relaxation time",
journal="Phys. Rev. B Condens. Matter.",
year="1996",
volume="53",
number="12",
pages="R7592-R7595",
optkeywords="2DEG; AlGaAs/GaAs heterostructures",
abstract="We present results for a method to measure directly the energy relaxation time ($\tau$e) for electrons in a single AlxGa1-xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find $\tau$e$\alpha$T-1 below 4 K, and $\tau$e independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩$\alpha$(T3e-T3) for T<{\textasciitilde}4.2 K; Te is the electron temperature. The values and temperature dependence of $\tau$e and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, $\tau$m, from our measured $\tau$e. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of $\mu$=3{\texttimes}107 cm2/Vs (ns=4.2{\texttimes}1011 cm-2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.",
optnote="PMID:9982274",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1612), last updated on Wed, 26 May 2021 11:50:56 -0500",
issn="0163-1829",
doi="10.1103/physrevb.53.r7592",
opturl="http://www.ncbi.nlm.nih.gov/pubmed/9982274",
opturl="https://doi.org/10.1103/physrevb.53.r7592"
}