@InProceedings{Yagoubov_etal1996,
author="Yagoubov, P.
and Gol{\textquoteright}tsman, G.
and Voronov, B.
and Svechnikov, S.
and Cherednichenko, S.
and Gershenzon, E.
and Belitsky, V.
and Ekstr{\"o}m, H.
and Semenov, A.
and Gousev, Yu
and Renk, K.",
title="Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies",
booktitle="Proc. 7$^{th}$ Int. Symp. Space Terahertz Technol.",
year="1996",
pages="303--317",
optkeywords="NbN HEB mixers",
abstract="In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1614), last updated on Wed, 26 May 2021 12:39:05 -0500",
opturl="https://www.nrao.edu/meetings/isstt/1996.shtml"
}