PT Unknown
AU Yagoubov, P
   Gol'tsman, G
   Voronov, B
   Svechnikov, S
   Cherednichenko, S
   Gershenzon, E
   Belitsky, V
   Ekström, H
   Semenov, A
   Gousev, Y
   Renk, K
TI Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies
SE Proc. 7[super:th] Int. Symp. Space Terahertz Technol.
PY 1996
BP 303
EP 317
DE NbN HEB mixers
AB In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
ER