@Article{Verevkin_etal1995,
author="Verevkin, A. I.
and Ptitsina, N. G.
and Chulkova, G. M.
and Gol{\textquoteright}tsman, G. N.
and Gershenzon, E. M.
and Yngvesson, K. S.",
title="Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures",
journal="JETP Lett.",
year="1995",
volume="61",
number="7",
pages="591--595",
optkeywords="2DEG; AlGaAs/GaAs heterostructures",
abstract="The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs---GaAs heterojunctions over the temperature range T= 1.5---20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;{\textquoteright}(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch----Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron---phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat---tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1624), last updated on Wed, 26 May 2021 14:39:08 -0500",
opturl="http://jetpletters.ru/ps/1206/article_18233.shtml"
}