TY  - JOUR
AU  - Verevkin, A. I.
AU  - Ptitsina, N. G.
AU  - Chulkova, G. M.
AU  - Gol'tsman, G. N.
AU  - Gershenzon, E. M.
AU  - Yngvesson, K. S.
PY  - 1995
DA  - 1995//
TI  - Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures
T2  - JETP Lett.
JO  - JETP Lett.
SP  - 591
EP  - 595
VL  - 61
IS  - 7
KW  - 2DEG
KW  - AlGaAs/GaAs heterostructures
AB  - The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
UR  - http://jetpletters.ru/ps/1206/article_18233.shtml
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1624), last updated on Wed, 26 May 2021 14:39:08 -0500
ID  - Verevkin_etal1995
ER  -