@Article{Gershenzon_etal1986,
author="Gershenzon, E. M.
and Gol{\textquoteright}tsman, G. N.
and Ptitsina, N. G.
and Riger, E. R.",
title="Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium",
journal="Sov. Phys. JETP",
year="1986",
volume="64",
number="4",
pages="889--897",
optkeywords="Ge; trapping of free carriers",
abstract="Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-{\textquoteright}n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1707), last updated on Fri, 28 May 2021 18:32:57 -0500",
opturl="http://www.jetp.ac.ru/cgi-bin/r/index/e/64/4/p889?a=list"
}