%0 Journal Article
%T Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium
%A Gershenzon, E. M.
%A Gol'tsman, G. N.
%A Ptitsina, N. G.
%A Riger, E. R.
%J Sov. Phys. JETP
%D 1986
%V 64
%N 4
%F Gershenzon_etal1986
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1707), last updated on Fri, 28 May 2021 18:32:57 -0500
%X Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
%K Ge
%K trapping of free carriers
%U http://www.jetp.ac.ru/cgi-bin/r/index/e/64/4/p889?a=list
%P 889-897