PT Journal
AU Gershenzon, EM
   Gol'tsman, GN
   Ptitsina, NG
   Riger, ER
TI Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium
SO Sov. Phys. JETP
JI Sov. Phys. JETP
PY 1986
BP 889
EP 897
VL 64
IS 4
DE Ge; trapping of free carriers
AB Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
ER