TY  - JOUR
AU  - Gershenzon, E. M.
AU  - Gol'tsman, G. N.
AU  - Ptitsina, N. G.
AU  - Riger, E. R.
PY  - 1986
DA  - 1986//
TI  - Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium
T2  - Sov. Phys. JETP
JO  - Sov. Phys. JETP
SP  - 889
EP  - 897
VL  - 64
IS  - 4
KW  - Ge
KW  - trapping of free carriers
AB  - Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
UR  - http://www.jetp.ac.ru/cgi-bin/r/index/e/64/4/p889?a=list
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1707), last updated on Fri, 28 May 2021 18:32:57 -0500
ID  - Gershenzon_etal1986
ER  -