PT Journal
AU Gershenzon, EM
   Gol'tsman, GN
   Multanovskii, VV
   Ptitsina, NG
TI Kinetics of electron and hole binding into excitons in germanium
SO Sov. Phys. JETP
JI Sov. Phys. JETP
PY 1983
BP 369
EP 376
VL 57
IS 2
DE Ge; electron and hole binding
AB The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
ER