TY  - JOUR
AU  - Gershenzon, E. M.
AU  - Gol'tsman, G. N.
AU  - Ptitsina, N. G.
PY  - 1979
DA  - 1979//
TI  - Population and lifetime of excited states of shallow impurities in Ge
T2  - Sov. Phys. JETP
JO  - Sov. Phys. JETP
SP  - 355
EP  - 362
VL  - 49
IS  - 2
KW  - Ge
KW  - photothermal ionization
KW  - shallow impurities
AB  - An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
UR  - http://www.jetp.ac.ru/cgi-bin/e/index/e/49/2/p355?a=list
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1719), last updated on Sat, 29 May 2021 21:16:55 -0500
ID  - Gershenzon_etal1979
ER  -