PT Journal
AU Gershenzon, EM
   Gol'tsman, GN
   Multanovskii, VV
   Ptitsyna, NG
TI Capture of photoexcited carriers by shallow impurity centers in germanium
SO Sov. Phys. JETP
JI Sov. Phys. JETP
PY 1979
BP 728
EP 734
VL 50
IS 4
DE Ge; photoexcited carriers; shallow impurity centers
AB Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
ER