@Article{Gershenzon_etal1977,
author="Gershenzon, E. M.
and Gol{\textquoteright}tsman, G. N.
and Elant{\textquoteright}ev, A. I.",
title="Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field",
journal="Sov. Phys. JETP",
year="1977",
volume="45",
number="3",
pages="555--565",
optkeywords="Ge; GaAs; magnetic field; donors; energy spectrum",
abstract="The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1728), last updated on Sun, 30 May 2021 11:14:08 -0500",
opturl="http://www.jetp.ac.ru/cgi-bin/e/index/e/45/3/p555?a=list"
}