%0 Journal Article
%T Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field
%A Gershenzon, E. M.
%A Gol'tsman, G. N.
%A Elant'ev, A. I.
%J Sov. Phys. JETP
%D 1977
%V 45
%N 3
%F Gershenzon_etal1977
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1728), last updated on Sun, 30 May 2021 11:14:08 -0500
%X The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
%K Ge
%K GaAs
%K magnetic field
%K donors
%K energy spectrum
%U http://www.jetp.ac.ru/cgi-bin/e/index/e/45/3/p555?a=list
%P 555-565