PT Journal
AU Gershenzon, EM
   Gol'tsman, GN
   Elant'ev, AI
TI Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field
SO Sov. Phys. JETP
JI Sov. Phys. JETP
PY 1977
BP 555
EP 565
VL 45
IS 3
DE Ge; GaAs; magnetic field; donors; energy spectrum
AB The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
ER