@Article{Gershenzon_etal1971,
author="Gershenzon, E. M.
and Gol{\textquoteright}tsman, G. N.
and Mel{\textquoteright}nikov, A. P.",
title="Binding energy of a carrier with a neutral impurity atom in germanium and in silicon",
journal="JETP Lett.",
year="1971",
volume="14",
number="5",
pages="185--186",
optkeywords="Ge; Si; neutral impurity atom; binding energy",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1739), last updated on Sun, 30 May 2021 13:34:52 -0500",
opturl="http://jetpletters.ru/ps/1628/article_24881.shtml"
}