%0 Journal Article
%T Binding energy of a carrier with a neutral impurity atom in germanium and in silicon
%A Gershenzon, E. M.
%A Gol'tsman, G. N.
%A Mel'nikov, A. P.
%J JETP Lett.
%D 1971
%V 14
%N 5
%F Gershenzon_etal1971
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1739), last updated on Sun, 30 May 2021 13:34:52 -0500
%K Ge
%K Si
%K neutral impurity atom
%K binding energy
%U http://jetpletters.ru/ps/1628/article_24881.shtml
%P 185-186