PT Journal
AU Gershenzon, EM
   Gol'tsman, GN
   Mel'nikov, AP
TI Binding energy of a carrier with a neutral impurity atom in germanium and in silicon
SO JETP Lett.
JI JETP Lett.
PY 1971
BP 185
EP 186
VL 14
IS 5
DE Ge; Si; neutral impurity atom; binding energy
ER