%0 Book Section
%T Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors
%A Matyushkin, Yakov
%A Fedorov, Georgy
%A Moskotin, Maksim
%A Danilov, Sergey
%A Ganichev, Sergey
%A Goltsman, Gregory
%B Graphene and 2dm Virt. Conf.
%D 2020
%F Matyushkin_etal2020
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1743), last updated on Sun, 30 May 2021 14:09:52 -0500
%X Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
%K single layer graphene
%K SLG
%K CVD
%K plasmons
%K FET
%U http://phantomsfoundation.com/GRAPHENECONF/2020/Abstracts/Grapheneconf2020_Matyushkin_Yakov_136.pdf