TY  - JOUR
AU  - Mel’nikov, A. P.
AU  - Gurvich, Y. A.
AU  - Shestakov, L. N.
AU  - Gershenzon, E. M.
PY  - 2001
DA  - 2001//
TI  - Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon
T2  - Jetp Lett.
JO  - Jetp Lett.
SP  - 44
EP  - 47
VL  - 73
IS  - 1
KW  - uncompensated crystalline silicon
KW  - nonohmic impurity conduction
KW  - magnetic field
AB  - The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
SN  - 0021-3640
UR  - http://link.springer.com/10.1134/1.1355405
UR  - https://doi.org/10.1134/1.1355405
DO  - 10.1134/1.1355405
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1752), last updated on Mon, 31 May 2021 14:01:09 -0500
ID  - Melnikov_etal2001
ER  -