%0 Journal Article
%T Electron–phonon interaction in disordered conductors
%A Sergeev, A.
%A Karasik, B. S.
%A Ptitsina, N. G.
%A Chulkova, G. M.
%A Il'in, K. S.
%A Gershenzon, E. M.
%J Phys. Rev. B Condens. Matter
%D 1999
%V 263-264
%@ 0921-4526
%F Sergeev_etal1999
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1765), last updated on Mon, 31 May 2021 21:10:44 -0500
%X The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
%K disordered conductors
%K electron-phonon interaction
%R 10.1016/S0921-4526(98)01323-4
%U https://linkinghub.elsevier.com/retrieve/pii/S0921452698013234
%U https://doi.org/10.1016/S0921-4526(98)01323-4
%P 190-192