PT Journal
AU Sergeev, A
   Karasik, BS
   Ptitsina, NG
   Chulkova, GM
   Il'in, KS
   Gershenzon, EM
TI Electron–phonon interaction in disordered conductors
SO Phys. Rev. B Condens. Matter
JI Phys. Rev. B Condens. Matter
PY 1999
BP 190
EP 192
VL 263-264
DI 10.1016/S0921-4526(98)01323-4
DE disordered conductors; electron-phonon interaction
AB The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
ER