TY  - JOUR
AU  - Sergeev, A.
AU  - Karasik, B. S.
AU  - Ptitsina, N. G.
AU  - Chulkova, G. M.
AU  - Il'in, K. S.
AU  - Gershenzon, E. M.
PY  - 1999
DA  - 1999//
TI  - Electron–phonon interaction in disordered conductors
T2  - Phys. Rev. B Condens. Matter
JO  - Phys. Rev. B Condens. Matter
SP  - 190
EP  - 192
VL  - 263-264
KW  - disordered conductors
KW  - electron-phonon interaction
AB  - The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
SN  - 0921-4526
UR  - https://linkinghub.elsevier.com/retrieve/pii/S0921452698013234
UR  - https://doi.org/10.1016/S0921-4526(98)01323-4
DO  - 10.1016/S0921-4526(98)01323-4
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1765), last updated on Mon, 31 May 2021 21:10:44 -0500
ID  - Sergeev_etal1999
ER  -