PT Journal
AU Ptitsina, NG
   Chulkova, GM
   Il’in, KS
   Sergeev, AV
   Pochinkov, FS
   Gershenzon, EM
   Gershenson, ME
TI Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate
SO Phys. Rev. B
JI Phys. Rev. B
PY 1997
BP 10089
EP 10096
VL 56
IS 16
DI 10.1103/PhysRevB.56.10089
DE disordered metal films; electron-phonon interaction; electron dephasing rate; resistivity
AB The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
ER