@InProceedings{Chulcova_etal1996,
author="Chulcova, G. M.
and Ptitsina, N. G.
and Gershenzon, E. M.
and Gershenzon, M. E.
and Sergeev, A. V.",
title="Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films",
booktitle="Czech J. Phys.",
year="1996",
volume="46",
number="S5",
pages="2489--2490",
optkeywords="Al; Be; Nb films",
abstract="The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Gr{\"u}neisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Gr{\"u}neisen term at low temperatures (T<40 K).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1767), last updated on Mon, 31 May 2021 21:45:37 -0500",
issn="0011-4626",
doi="10.1007/BF02570231",
opturl="http://link.springer.com/10.1007/BF02570231",
opturl="https://doi.org/10.1007/BF02570231"
}