%0 Conference Proceedings
%T Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films
%A Chulcova, G. M.
%A Ptitsina, N. G.
%A Gershenzon, E. M.
%A Gershenzon, M. E.
%A Sergeev, A. V.
%S Czech J. Phys.
%D 1996
%V 46
%N S5
%@ 0011-4626
%F Chulcova_etal1996
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1767), last updated on Mon, 31 May 2021 21:45:37 -0500
%X The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
%K Al
%K Be
%K Nb films
%R 10.1007/BF02570231
%U http://link.springer.com/10.1007/BF02570231
%U https://doi.org/10.1007/BF02570231
%P 2489-2490