PT Unknown
AU Chulcova, GM
   Ptitsina, NG
   Gershenzon, EM
   Gershenzon, ME
   Sergeev, AV
TI Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films
SE Czech J. Phys.
PY 1996
BP 2489
EP 2490
VL 46
IS S5
DI 10.1007/BF02570231
DE Al; Be; Nb films
AB The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
ER