TY  - CONF
AU  - Chulcova, G. M.
AU  - Ptitsina, N. G.
AU  - Gershenzon, E. M.
AU  - Gershenzon, M. E.
AU  - Sergeev, A. V.
PY  - 1996
DA  - 1996//
TI  - Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films
T2  - Czech J. Phys.
BT  - Czech J. Phys.
SP  - 2489
EP  - 2490
VL  - 46
IS  - S5
KW  - Al
KW  - Be
KW  - Nb films
AB  - The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
SN  - 0011-4626
UR  - http://link.springer.com/10.1007/BF02570231
UR  - https://doi.org/10.1007/BF02570231
DO  - 10.1007/BF02570231
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1767), last updated on Mon, 31 May 2021 21:45:37 -0500
ID  - Chulcova_etal1996
ER  -