@InProceedings{Romanov_etal2019,
author="Romanov, N. R.
and Zolotov, P. I.
and Smirnov, K. V.",
title="Development of disordered ultra-thin superconducting vanadium nitride films",
booktitle="Proc. 8th Int. Conf. Photonics and Information Optics",
year="2019",
pages="425--426",
optkeywords="VN films",
abstract="We present the results of development and research of superconducting vanadium nitride VN films {\textasciitilde}10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.",
optnote="http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1802), last updated on Sat, 03 Jul 2021 19:34:40 -0500",
isbn="978-5-7262-2536-4",
opturl="http://fioconf.mephi.ru/archive/",
language="Russian"
}