%0 Conference Proceedings
%T Development of disordered ultra-thin superconducting vanadium nitride films
%A Romanov, N. R.
%A Zolotov, P. I.
%A Smirnov, K. V.
%S Proc. 8th Int. Conf. Photonics and Information Optics
%D 2019
%@ 978-5-7262-2536-4
%G Russian
%F Romanov_etal2019
%O http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1802), last updated on Sat, 03 Jul 2021 19:34:40 -0500
%X We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
%K VN films
%U http://fioconf.mephi.ru/archive/
%P 425-426