PT Unknown
AU Romanov, NR
   Zolotov, PI
   Smirnov, KV
TI Development of disordered ultra-thin superconducting vanadium nitride films
SE Proc. 8th Int. Conf. Photonics and Information Optics
PY 2019
BP 425
EP 426
LA Russian
DE VN films
AB We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
ER