@Article{Emelianov_etal2021,
author="Emelianov, A. V.
and Nekrasov, N. P.
and Moskotin, M. V.
and Fedorov, G. E.
and Otero, N.
and Romero, P. M.
and Nevolin, V. K.
and Afinogenov, B. I.
and Nasibulin, A. G.
and Bobrinetskiy, I. I.",
title="Individual SWCNT transistor with photosensitive planar junction induced by two-photon oxidation",
journal="Adv. Electron. Mater.",
year="2021",
volume="7",
number="3",
pages="2000872",
optkeywords="SWCNT transistors",
abstract="The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 {\texttimes} 107 A W-1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1843), last updated on Thu, 12 Aug 2021 20:08:20 -0500",
issn="2199-160X",
doi="10.1002/aelm.202000872",
opturl="https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000872",
opturl="https://doi.org/10.1002/aelm.202000872"
}