%0 Journal Article
%T Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation
%A Emelianov, A. V.
%A Nekrasov, N. P.
%A Moskotin, M. V.
%A Fedorov, G. E.
%A Otero, N.
%A Romero, P. M.
%A Nevolin, V. K.
%A Afinogenov, B. I.
%A Nasibulin, A. G.
%A Bobrinetskiy, I. I.
%J Adv. Electron. Mater.
%D 2021
%V 7
%N 3
%@ 2199-160X
%F Emelianov_etal2021
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1843), last updated on Thu, 12 Aug 2021 20:08:20 -0500
%X The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
%K SWCNT transistors
%R 10.1002/aelm.202000872
%U https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000872
%U https://doi.org/10.1002/aelm.202000872
%P 2000872