PT Journal
AU Emelianov, AV
   Nekrasov, NP
   Moskotin, MV
   Fedorov, GE
   Otero, N
   Romero, PM
   Nevolin, VK
   Afinogenov, BI
   Nasibulin, AG
   Bobrinetskiy, II
TI Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation
SO Adv. Electron. Mater.
JI Adv. Electron. Mater.
PY 2021
BP 2000872
VL 7
IS 3
DI 10.1002/aelm.202000872
DE SWCNT transistors
AB The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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