TY  - JOUR
AU  - Emelianov, A. V.
AU  - Nekrasov, N. P.
AU  - Moskotin, M. V.
AU  - Fedorov, G. E.
AU  - Otero, N.
AU  - Romero, P. M.
AU  - Nevolin, V. K.
AU  - Afinogenov, B. I.
AU  - Nasibulin, A. G.
AU  - Bobrinetskiy, I. I.
PY  - 2021
DA  - 2021//
TI  - Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation
T2  - Adv. Electron. Mater.
JO  - Adv. Electron. Mater.
SP  - 2000872
VL  - 7
IS  - 3
KW  - SWCNT transistors
AB  - The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
SN  - 2199-160X
UR  - https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000872
UR  - https://doi.org/10.1002/aelm.202000872
DO  - 10.1002/aelm.202000872
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1843), last updated on Thu, 12 Aug 2021 20:08:20 -0500
ID  - Emelianov_etal2021
ER  -