TY  - CONF
AU  - Yagubov, P.
AU  - Gol'tsman, G.
AU  - Voronov, B.
AU  - Seidman, L.
AU  - Siomash, V.
AU  - Cherednichenko, S.
AU  - Gershenzon, E.
PY  - 1996
DA  - 1996//
TI  - The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate
T2  - Proc. 7[super:th] Int. Symp. Space Terahertz Technol.
BT  - Proc. 7[super:th] Int. Symp. Space Terahertz Technol.
SP  - 290
EP  - 302
CY  - Charlottesville, Virginia, USA
KW  - NbN HEB mixers
KW  - fabrication process
AB  - We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
UR  - https://www.nrao.edu/meetings/isstt/1996.shtml
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=266), last updated on Wed, 26 May 2021 12:24:59 -0500
ID  - Yagubov_etal1996
ER  -