@InProceedings{Vahtomin_etal2002,
author="Vahtomin, Yuriy B.
and Finkel, Matvey I.
and Antipov, Sergey V.
and Voronov, Boris M.
and Smirnov, Konstantin V.
and Kaurova, Natalia S.
and Drakinski, Vladimir N.
and Gol{\textquoteright}tsman, Gregogy N.",
editor="Harvard university",
title="Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si",
booktitle="Proc. 13$^{th}$ Int. Symp. Space Terahertz Technol.",
year="2002",
address="Cambridge, MA, USA",
pages="259--270",
optkeywords="NbN HEB mixers; conversion gain bandwidth",
abstract="We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=325), last updated on Fri, 21 May 2021 13:38:15 -0500",
opturl="https://www.nrao.edu/meetings/isstt/2002.shtml"
}