PT Unknown
AU Vahtomin, YB
   Finkel, MI
   Antipov, SV
   Voronov, BM
   Smirnov, KV
   Kaurova, NS
   Drakinski, VN
   Gol'tsman, GN
TI Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si
SE Proc. 13[super:th] Int. Symp. Space Terahertz Technol.
PY 2002
BP 259
EP 270
DE NbN HEB mixers; conversion gain bandwidth
AB We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
PI Cambridge, MA, USA
ER