TY  - CONF
AU  - Vahtomin, Yuriy B.
AU  - Finkel, Matvey I.
AU  - Antipov, Sergey V.
AU  - Voronov, Boris M.
AU  - Smirnov, Konstantin V.
AU  - Kaurova, Natalia S.
AU  - Drakinski, Vladimir N.
AU  - Gol'tsman, Gregogy N.
ED  - Harvard university
PY  - 2002
DA  - 2002//
TI  - Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si
T2  - Proc. 13[super:th] Int. Symp. Space Terahertz Technol.
BT  - Proc. 13[super:th] Int. Symp. Space Terahertz Technol.
SP  - 259
EP  - 270
CY  - Cambridge, MA, USA
KW  - NbN HEB mixers
KW  - conversion gain bandwidth
AB  - We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
UR  - https://www.nrao.edu/meetings/isstt/2002.shtml
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=325), last updated on Fri, 21 May 2021 13:38:15 -0500
ID  - Vahtomin_etal2002
ER  -