@Article{Meledin_etal2003,
author="Meledin, D.
and Tong, C. Y-E
and Blundell, R.
and Kaurova, N.
and Smirnov, K.
and Voronov, B.
and Gol{\textquoteright}tsman, G.",
title="Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer",
journal="IEEE Trans. Appl. Supercond.",
year="2003",
volume="13",
number="2",
pages="164--167",
optkeywords="NbN HEB mixer",
abstract="In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=341), last updated on Thu, 20 May 2021 19:22:33 -0500",
doi="10.1109/TASC.2003.813671",
opturl="https://doi.org/10.1109/TASC.2003.813671"
}