%0 Conference Proceedings
%T Progress in far-infrared detection technology
%A Zhou, Y. D.
%A Becker, C. R.
%A Ashokan, R.
%A Selamet, Y.
%A Chang, Y.
%A Boreiko, R. T.
%A Betz, A. L.
%A Sivananthan, S.
%Y Longshore, R. E.
%Y Sivananthan, S.
%S Proc. SPIE
%S Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series
%D 2002
%V 4795
%F Zhou_etal2002
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=471), last updated on Wed, 24 Dec 2008 00:38:54 -0600
%X II-VI intrinsic very long wavelength infrared (VLWIR, λ[sub:c]~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
%K HgCdTe/CdTe
%K detector
%P 121-128