PT Unknown
AU Zhou, YD
   Becker, CR
   Ashokan, R
   Selamet, Y
   Chang, Y
   Boreiko, RT
   Betz, AL
   Sivananthan, S
TI Progress in far-infrared detection technology
SE Proc. SPIE
PY 2002
BP 121
EP 128
VL 4795
DE HgCdTe/CdTe; detector
AB II-VI intrinsic very long wavelength infrared (VLWIR, λ[sub:c]~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
ER